Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation

Solar Energy Materials and Solar Cells

Volumn 92, Issue 12, 2008, Pages 1652-1656

  Hu, Jianmin ^a,b   Wu, Yiyong ^a   Xiao, Jingdong ^a   Yang, Dezhuang ^a   Zhang, Zhongwei ^c  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b HARBIN NORMAL UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF SPACE POWER SOURCES   (China)

Author keywords

Electric properties; Proton irradiation; Spectral response; Triple junction solar cells

Indexed keywords

ELECTRIC PROPERTIES; ELECTROPHYSIOLOGY; GALLIUM ARSENIDE; IRRADIATION; SEMICONDUCTING GALLIUM; SOLAR CELLS;

DEGRADATION BEHAVIOR; DEGRADATION EFFECT; MEASUREMENTS OF; PENETRATION RANGE; PROTON FLUENCES; SPECTRAL RESPONSE; TRIPLE JUNCTION CELLS; TRIPLE JUNCTION SOLAR CELLS;

PROTON IRRADIATION;

EID: 55349139286     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.07.017     Document Type: Article

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