A study on the degradation of GaAs/Ge solar cells irradiated by <200 keV protons

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 2, 2008, Pages 267-270

  Hu, Jian Min ^a,b   Wu, Yi Yong ^a   Zhang, Zhongwei ^c   Yang, De Zhuang ^a   He, Shi Yu ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b HARBIN NORMAL UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF SPACE POWER SOURCES   (China)

Author keywords

Electric properties; GaAs Ge solar cells; Proton irradiation; Spectral response

Indexed keywords

ELECTRIC PROPERTIES; PROTON IRRADIATION; SEMICONDUCTING GALLIUM ARSENIDE;

CIRCUIT VOLTAGE; PROTON ENERGIES; SPECTRAL RESPONSE;

SOLAR CELLS;

EID: 38349013542     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.11.010     Document Type: Article

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