Infrared detection using carbon nanotube field effect transistor

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 88-91

  Chen, Hongzhi ^a   Xi, Ning ^a   King Lai, Wai Chiu ^a   Zhang, Jiangbo ^a   Luo, Yilun ^a  

^a Michigan State University   (United States)

Author keywords

Carbon nanotubes (CNTs); Field effect transistors (FETs); Infrared (IR) detector; Photodiode

Indexed keywords

CARBON; DARK CURRENTS; DETECTORS; ELECTRIC PROPERTIES; FERMI LEVEL; FERMIONS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED DETECTORS; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTODIODES; SCHOTTKY BARRIER DIODES; TRANSISTORS;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DIMENSIONAL STRUCTURES; DOPING LEVELS; ELECTRICAL PROPERTIES; ELECTROSTATIC DOPING; ENERGY LEVELS; FIELD-EFFECT TRANSISTORS (FETS); HOLE PAIRS; INFRARED (IR) DETECTOR; INFRARED DETECTIONS; IR DETECTORS; OPTIMAL DESIGNS; PHOTOGENERATED ELECTRONS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SEMI-CONDUCTORS; TEST RESULTS; WORKING PRINCIPLES;

CARBON NANOTUBES;

EID: 55349134894     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.33     Document Type: Conference Paper

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