Scaling of the Cu(Al) seed layer thickness and its impact on the specific resistivity of sub-100 nm interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2008, Pages 221-227

  Carbonell, Laureen ^a   Volders, Henny ^a   Haider, Asad ^b   Heylen, Nancy ^a   Richard, Olivier ^a   Palmans, Roger ^a   Travaly, Youssef ^a   Tokei, Zsolt ^a   Boelen, Pieter ^c   Rosenfeld, Aron ^d   Mandrekar, Tushar ^d   Hernàndez, José Luis ^a   Vanhaelemeersch, Serge ^a  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (United States)

^c Applied Materials Belgium ^*

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGRICULTURAL PRODUCTS; ALUMINUM; CRYSTAL GROWTH; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALLIZING; PHYSICAL VAPOR DEPOSITION; SCATTERING; SEED; TANTALUM COMPOUNDS;

BOUNDARY SCATTERINGS; GRAIN SIZES; INTER-CONNECTS; NARROW INTERCONNECTS; RECRYSTALLIZATION; SEED LAYER THICKNESSES; SEED LAYERS; SEED THICKNESSES; SIDE-WALLS; SPECIFIC RESISTIVITIES; TAN BARRIERS;

COPPER;

EID: 55349124573     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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