Study of the influence of bias and matching networks on the distortion and memory of FET-based power amplifiers

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 18, Issue 6, 2008, Pages 517-526

  Santiago, Jon ^a   Portilla, Joaquín ^a   Fernández, Tomás ^b  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

Intermodulation distortion; Memory; MESFET power amplifiers; Pulsed measurements; Semiconductor device modeling

Indexed keywords

ELECTRIC NETWORK TOPOLOGY; FIELD EFFECT TRANSISTORS; MESFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

AMPLIFIER CIRCUITS; AMPLIFIER DESIGNS; BIAS POINTS; LONG-TERM MEMORIES; MATCHING NETWORKS; MEMORY; MESFET POWER AMPLIFIERS; PULSED MEASUREMENTS; SEMICONDUCTOR DEVICE MODELING; SIMULATIONS AND MEASUREMENTS;

POWER AMPLIFIERS;

EID: 55349117456     PISSN: 10964290     EISSN: 1099047X     Source Type: Journal    
DOI: 10.1002/mmce.20327     Document Type: Article

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