Crystal structure, electronic and transport properties of AgSbSe 2 and AgSbTe2

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 11, 2008, Pages 2748-2755

  Wojciechowski, K ^a   Tobola, J ^a   Schmidt, M ^a   Zybala, R ^a  

^a AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

Author keywords

Electrical properties; Electronic materials; Electronic structure; Semiconductors

Indexed keywords

ANTIMONY COMPOUNDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; STRUCTURAL PROPERTIES; THERMAL CONDUCTIVITY; X RAY DIFFRACTION;

COHERENT POTENTIAL APPROXIMATION; DISORDERED SYSTEM; ELECTRICAL CONDUCTIVITY; ELECTRON TRANSPORT; ELECTRONIC MATERIALS; ELECTRONIC STRUCTURE CALCULATIONS; FUSION TECHNIQUES; KORRINGA-KOHN-ROSTOKER METHOD;

CRYSTAL STRUCTURE;

EID: 55349087881     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.06.148     Document Type: Article

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