Angle dependence of planar Hall resistance and anisotropic magnetoresistance of (Ga,Mn)As and Permalloy microdevices

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Jung, M H ^a   Park, S ^b   Eom, J ^c   Chun, S H ^c   Shin, K ^d  

^a Sogang University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c Sejong University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ARSENIC; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROCHEMICAL ETCHING; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETS; MANGANESE; MANGANESE COMPOUNDS; PORTABLE EQUIPMENT;

(GA ,MN)AS; ANGLE DEPENDENCES; ANISOTROPIC MAGNETORESISTANCES; COMPLEX DOMAINS; FERROMAGNETIC SEMICONDUCTORS; MICRODEVICES; PERMALLOIES (PY); PLANAR HALL EFFECTS; PLANAR HALL RESISTANCES; SHAPE ANISOTROPIES; SYSTEMATIC STUDIES; VOLTAGE PROBES;

MAGNETIZATION REVERSAL;

EID: 55249127097     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3003049     Document Type: Article

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