Kerr and free carrier ultrafast all-optical switching of GaAs/AlAs nanostructures near the three photon edge of GaAs

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Hartsuiker, Alex ^a   Harding, Philip J ^a   Nowicki Bringuier, Yoanna Reine ^b   Ǵrard, Jean Michel ^b   Vos, Willem L ^a,c  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b CEA GRENOBLE   (France)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CIVIL AVIATION; ELECTROOPTICAL EFFECTS; ELECTROSTATICS; GALLIUM ALLOYS; KERR MAGNETOOPTICAL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETOOPTICAL EFFECTS; OPTICAL PROPERTIES; OPTICAL SWITCHES; PHOTONS; SEMICONDUCTING GALLIUM;

ALL-OPTICAL SWITCHING; ELECTRONIC KERR EFFECTS; FREE CARRIERS; KERR COEFFICIENTS; NEAR INFRARED; PHOTONIC CAVITIES; PHOTONIC PROPERTIES; SPECTRAL RANGES; TELECOM; THREE PHOTONS; THREE WAVELENGTHS; ULTRA FASTS; WAVELENGTH RANGES;

OPTICAL KERR EFFECT;

EID: 55249104982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000098     Document Type: Article

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