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Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

Electric-field-induced resonant tunneling lifetime in semiconductor multibarrier systems

(4) Panchadhyayee, P a,b Biswas, R a Khan, Arif c Mahapatra, P K b

a PRABHAT KUMAR COLLEGE (India)

b VIDYASAGAR UNIVERSITY (India)

c Electrocom Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CIVIL AVIATION; ELECTRIC FIELD EFFECTS; RESONANT TUNNELING;

APPLIED ELECTRIC FIELDS; BALLISTIC TRANSPORTS; CARRIER VELOCITIES; ELECTRIC-FIELD; ESCAPE RATES; IN FIELDS; LIFE-TIMES; MINIBAND; MINIBAND EDGES; MULTIBARRIER SYSTEMS; SEMI-CONDUCTORS; STARK LADDERS; WANNIER;

ELECTRIC FIELDS;

EID: 55249103391 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3006007 Document Type: Article

Times cited : (8)

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