Effective mass dependence of resonant quasi-level lifetime in GaAs-AlxGa1-xAs double-barrier structures

Physica B: Condensed Matter

Volumn 292, Issue 3-4, 2000, Pages 233-237

  Elabsy, A M ^a  

^a Mansoura University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

DOUBLE-BARRIER STRUCTURES; RESONANT QUASI-LEVEL LIFETIME;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034325028     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(00)00472-5     Document Type: Article

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