Electro-optic anisotropy of epitaxially grown (Pb,La)(Zr,Ti)O3 films fabricated by modified sol-gel process

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7545-7548

  Echizen, Masahiro ^a   Fujii, Takeshi ^a   Nozaka, Takashi ^a   Nishida, Takashi ^a   Takeda, Hiroaki ^a   Uchiyama, Kiyoshi ^a   Shiosaki, Tadashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Anisotropy; Electro optic effect; Epitaxial relation; PLZT; Thin film

Indexed keywords

ANISOTROPY; COLLOIDS; CORUNDUM; CRYSTALLOGRAPHY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; GELATION; GELS; LANTHANUM; LEAD; LEAD ALLOYS; NANOSTRUCTURED MATERIALS; SAPPHIRE; SINGLE CRYSTALS; SOL-GELS; SOLS; STEREOCHEMISTRY; SUBSTRATES; THICK FILMS; ZIRCONIUM; FABRICATION; THIN FILMS;

APPLIED ELECTRIC FIELDS; ELECTRO-OPTIC EFFECT; EO COEFFICIENTS; EPITAXIAL RELATION; EPITAXIALLY GROWN; PLZT; PLZT FILMS; SAPPHIRE SUBSTRATES;

SOL-GEL PROCESS;

ELECTROOPTIC EFFECTS; EO COEFFICIENT; EPITAXIAL RELATIONS; EPITAXIALLY GROWN; MODIFIED SOL-GEL PROCESS; PLZT; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE;

EID: 55149117995     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7545     Document Type: Article

References (22)

1. C. E. Land, P. D. Thacher, and G. H. Haertling: in Applied Solid State Science, ed. R. Wolf (Academic Press, New York, 1974) Vol. 4, p. 137.
2. G. H. Haertling and C. E. Land: J. Am. Ceram. Soc. 54 (1971) 1.
3. K. Oshima and K. Tsuzuki: Jpn. J. Appl. Phys. 33 (1994) 5389.
4. K. Tanaka, M. Yamaguchi, H. Seto, M. Murata, and K. Wakino: Jpn. J. Appl. Phys. 24 (1985) 177.
5. Y. Masuda and A. Baba: Proc. 6th Meet. Ferroelectric Materials and Their Applications, Kyoto, 1987, Jpn. J. Appl. Phys. 26 (1987) Suppl. 26-2, p. 132.
6. T. Shibaguchi and H. Funato: Jpn. J. Appl. Phys. 31 (1992) 3196.
7. H. Koiwa, S. Takahashi, T. Kikuchi, and K. Nagata: Jpn. J. Appl. Phys. 32 (1993) 2477.
8. T. Utsunomiya: Jpn. J. Appl. Phys. 33 (1994) 5440.
9. Y. Taniguchi, K. Murakami, H. Kobayashi, and S. Tanaka: Jpn. J. Appl. Phys. 36 (1997) 2709.
10. P. S. Qiu, W. X. Cheng, X. Y. He, X. S. Zheng, and A. L. Ding: Integrated Ferroelectr. 75 (2005) 155.
11. M. Shimizu, H. Fujisawa, and T. Shiosaki: Microelectron. Eng. 29 (1995) 173.
12. K. Nashimoto, S. Nakamura, T. Morikawa, H. Moriyama, M. Watanabe, and E. Osakabe: Jpn. J. Appl. Phys. 38 (1999) 5641.
13. K. D. Preston and G. H. Haertling: Appl. Phys. Lett. 60 (1992) 2831.
14. D. H. Reitze, E. Haton, R. Ramesh, S. Etemad, D. E. Leaird, and T. Sands: Appl. Phys. Lett. 63 (1993) 596.
15. G. H. Haertling: Integrated Ferroelectr. 3 (1993) 207.
16. S.-H. Lee, T. W. Noh, and J.-H. Lee: Appl. Phys. Lett. 68 (1996) 472.
17. Y. Lu, J. Zheng, M. C. Golomb, F. Wang, H. Jiang, and J. Zhao: Appl. Phys. Lett. 74 (1999) 3764.
18. K. Uchiyama, A. Kasamatsu, Y. Otani, and T. Shiosaki: Integrated Ferroelectr. 84 (2006) 129.
19. K. Uchiyama, A. Kasamatsu, Y. Otani, and T. Shiosaki: Jpn. J. Appl. Phys. 46 (2007) L244.
20. M. Echizen, T. Nishida, T. Nozaka, H. Takeda, K. Uchiyama, and T. Shiosaki: Jpn. J. Appl. Phys. 46 (2007) 6933.
21. R. Swanepoel: J. Phys. E 16 (1983) 1214.
22. J. C. Manifacier, J. Gasiot, and J. P. Fillard: J. Phys. E 9 (1976) 1002.