Anisotropic step stiffness from a kinetic model of epitaxial growth

Multiscale Modeling and Simulation

Volumn 7, Issue 1, 2008, Pages 242-273

  Margetis, Dionisios ^a   Caflisch, Russel E ^b  

^a Bldg 142   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Adatoms; Edge atoms; Ehrlich Schwoebel barrier; Epitaxial growth; Gibbs Thomson formula; Island dynamics; Kinetic steady state; Line tension; Step edge; Step edge kinetics; Step permeability; Step stiffness; Surface diffusion

Indexed keywords

EDGE-ATOMS; EHRLICH-SCHWOEBEL BARRIER; GIBBS-THOMSON FORMULA; ISLAND DYNAMICS; KINETIC STEADY STATE; LINE TENSION; STEP EDGE; STEP EDGE KINETICS; STEP PERMEABILITY; STEP STIFFNESS;

ADATOMS; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; FLUXES; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR DOPING; SOIL CONSERVATION; STIFFNESS; SURFACE DIFFUSION;

EPITAXIAL GROWTH;

EID: 55149111162     PISSN: 15403459     EISSN: 15403467     Source Type: Journal    
DOI: 10.1137/070690948     Document Type: Article

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