Structural, electronic, and optical properties of InxGa 1-xAs alloys by full potential linear augmented plane wave method

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5417-5419

  Kumar, Sudhir ^a   Maurya, Tarun K ^a   Auluck, S ^a,b  

^a M J P ROHILKHAND UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Electronic structure; FPLAPW; Optical properties

Indexed keywords

CONCENTRATION (PROCESS); ELECTRONIC STRUCTURE; EQUATIONS OF STATE; GALLIUM; INDIUM; LATTICE CONSTANTS; METALLIC COMPOUNDS; OPTICAL MATERIALS; OPTOELECTRONIC DEVICES; PROBABILITY DENSITY FUNCTION;

ATOMIC POSITIONS; CRITICAL POINT ENERGIES; CRITICAL POINTS; DIELECTRIC FUNCTIONS; EXPERIMENTAL DATUMS; FITTING PARAMETERS; FPLAPW; FULL POTENTIAL LINEAR AUGMENTED PLANE WAVES; INDIUM CONCENTRATIONS; INITIO CALCULATIONS; POLYNOMIAL EQUATIONS; QUALITATIVE AGREEMENTS; VEGARD'S LAWS;

OPTICAL PROPERTIES;

EID: 55149101110     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5417     Document Type: Article

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