Net acceptor concentration in ZnSe:Sb grown from vapor phase

Journal of Crystal Growth

Volumn 242, Issue 1-2, 2002, Pages 155-160

  Prokesch, M ^a   Irmscher, K ^b   Rinas, U ^b   Makino, H ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Doping; A1. Impurities; A1. Point defects; A2. Growth from vapor; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; BINDING ENERGY; CAPACITANCE; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC POTENTIAL; PHOTOLUMINESCENCE; POINT DEFECTS; ZINC COMPOUNDS;

NET ACCEPTOR CONCENTRATION;

VAPOR PHASE EPITAXY;

EID: 0036643629     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01424-0     Document Type: Article

References (11)