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Volumn 33, Issue 3, 2000, Pages 180-184
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Growth of ZnSe:N epilayers by pulsed laser ablation deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DEPOSITION;
FILM GROWTH;
LASER ABLATION;
MORPHOLOGY;
NEODYMIUM LASERS;
NITROGEN;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
STOICHIOMETRY;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
CRYSTALLINITY;
EPILAYERS;
NITROGEN BEAM;
PULSED LASER ABLATION DEPOSITION;
SUPERSONIC NOZZLE BEAM SOURCE;
THIN FILMS;
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EID: 0342656597
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/33/3/302 Document Type: Article |
Times cited : (12)
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References (19)
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