Fabrication of nanopillars comprised of InGaN/GaN multiple quantum wells by focused ion beam milling

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 2, 2008, Pages 4906-4908

  Wu, Shang En ^a   Huang, Yu Wen ^a   Hsueh, Tao Hung ^a   Liu, Chuan Pu ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Direct writing; LEDs; Nanofabrication; Nanorods; Nanostructures; Nanotips; Wet etching

Indexed keywords

BEAM PLASMA INTERACTIONS; ELECTROMAGNETIC WAVES; ETCHING; FOCUSED ION BEAMS; ION BEAMS; ION BOMBARDMENT; IONS; MILLING (MACHINING); NANORODS; NANOSTRUCTURES; NANOTIPS;

BEAM CONDITIONS; DIRECT WRITING; EMISSION INTENSITIES; FOCUSED ION BEAM MILLINGS; INGAN/GAN; KOH SOLUTIONS; LEDS; MULTIPLE QUANTUM WELLS; NANOFABRICATION; NANOPILLARS; SWELLING BEHAVIORS; SWOLLEN VOLUMES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 55049115155     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4906     Document Type: Article

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