Changes in optical properties of MnAs thin films on GaAs(001) induced by α- to β-phase transition

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 4, 2008, Pages 859-862

  Gallas, B ^a   Rivory, J ^a   Arwin, H ^b   Vidal, F ^a   Etgens, V H ^a  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC; BROAD STRUCTURES; DIAGONAL ELEMENTS; ELLIPSOMETRY MEASUREMENTS; GAAS(001); GAAS(001) SUBSTRATE; HEXAGONAL; INDUCED ENERGIES; INTERBAND TRANSITIONS; JONES MATRIXES; OPTICAL FUNCTIONS; PHASE-TRANSITION; SPECTRAL RANGES; THIN-FILMS; VISIBLE RANGES; ZERO FREQUENCIES;

ANISOTROPY; GALLIUM ALLOYS; MANGANESE COMPOUNDS; OPTICAL CONDUCTIVITY; OPTICAL PROPERTIES; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SUBSTRATES; THICK FILMS;

PHASE TRANSITIONS;

EID: 54949126832     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200777782     Document Type: Article

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