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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 4, 2008, Pages 863-866

Monitoring the α- to β-phase transition in MnAs/GaAs(001) thin films as function of temperature

(5) Gallas, B a Rivory, J a Arwin, H b Vidal, F a Stchakovsky, M c

a INSTITUT DES NANOSCIENCES DE PARIS (France)

b LINKÖPING UNIVERSITY (Sweden)

c HORIBA LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS; CAPPING LAYERS; COMPLEX DIELECTRIC FUNCTIONS; DIAGONAL ELEMENTS; ELLIPSOMETRIC MEASUREMENTS; ELLIPSOMETRIC PARAMETERS; GAAS(001); JONES MATRIXES; MODELING; PHASE-TRANSITION; SPECTRAL RANGES; THICK LAYERS; THIN-FILMS; TWO PHASES;

ELLIPSOMETRY; GALLIUM ALLOYS; OPTICAL PROPERTIES; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; THICK FILMS;

MANGANESE COMPOUNDS;

EID: 54849421414 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200777783 Document Type: Article

Times cited : (6)

References (8)

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