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Applied Physics A: Materials Science and Processing

Volumn 93, Issue 3, 2008, Pages 669-674

Growth of the magnetic semiconductor Fe2-x Ti x O3±δ thin films by pulsed laser deposition

(9) Popova, E a Ndilimabaka, H a Warot Fonrose, B b Bibes, M c Keller, N a Berini, B a Jomard, F a Bouzehouane, K c Dumont, Y a

a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT (France)

b CEMES CNRS (France)

c CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; FILM GROWTH; HEMATITE; INTERFACES (MATERIALS); MAGNETIC SEMICONDUCTORS; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; SAPPHIRE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES; TITANIUM COMPOUNDS;

IN-PLANE LATTICE PARAMETERS; OXYGEN PRESSURE RANGE; OXYGEN STOICHIOMETRY; SAPPHIRE SUBSTRATES; SPINTRONICS APPLICATION; SUBSTRATE TEMPERATURE; THIN-FILM STRUCTURE; THREE ORDERS OF MAGNITUDE;

THIN FILMS;

EID: 54549103429 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4693-x Document Type: Article

Times cited : (9)

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