Electronic and magnetic structure of a 1000 K magnetic semiconductor: α-hematite (Ti)

Journal of Applied Physics

Volumn 93, Issue 10 3, 2003, Pages 7882-7884

  Butler, W H ^a,b   Bandyopadhyay, A ^a   Srinivasan, R ^a  

^a University of Alabama   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ELECTRONIC STRUCTURE; MAGNETIC COUPLINGS; MAGNETIC MOMENTS; POSITIVE IONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSITION METALS;

MAGNETIC STRUCTURE;

MAGNETIC SEMICONDUCTORS;

EID: 0037642338     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1556127     Document Type: Conference Paper

References (24)

1. H. Munekata, H. Ohno, S. VonMolnar, A. Segmuller, L. L. Chang, and L. Esaki, Phys. Rev. Lett. 63, 1849 (1989).
2. H. Ohno, Physica E (Amsterdam) 6, 702 (2000); H. Ohno and F. Matsukura, Solid State Commun. 117, (2001).
3. H. Ohno, Physica E (Amsterdam) 6, 702 (2000); H. Ohno and F. Matsukura, Solid State Commun. 117, (2001).
4. S. Sonoda, S. Shimizu, T. Sasaki, Y. Yamanoto, and H. Hori, J. Cryst. Growth 237, 1358 (2002); G. T. Thaler et al., Appl. Phys. Lett. 80, 3964 (2002).
5. S. Sonoda, S. Shimizu, T. Sasaki, Y. Yamanoto, and H. Hori, J. Cryst. Growth 237, 1358 (2002); G. T. Thaler et al., Appl. Phys. Lett. 80, 3964 (2002).
6. N. Theodoropoulou, A. F. Hebard, S. N. G. Chu, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, and J. M. Zavada, J. Appl. Phys. 91, 7499 (2002).
7. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
8. S. A. Chambers et al., Appl. Phys. Lett. 79, 3467 (2001).
9. The remanent magnetization that results from cooling ilmenite-hematite solid solutions in low fields is often opposite to the applied field.
10. M. Prévot, K. A. Hoffman, A. Goguitchaivili, J.-C. Doukhan, V. Scherbakov, and M. Bina, Phys. Earth Planet. Inter. 126, 75 (2001).
11. Y. Ishikawa and S. Akimoto, J. Phys. Soc. Jpn. 12, 1083 (1957).
12. Y. Ishikawa, J. Phys. Soc. Jpn. 13, 37 (1958).
13. F. J. Morin, Phys. Rev. 78, 819 (1950).
14. I. Dzialoshinski, J. Phys. Chem. Solids 4, 241 (1958).
15. T. Moriya, Phys. Rev. 120, 91 (1960).
16. L. M. Sandratski and J. Kübler, Europhys. Lett. 33, 447 (1996).
17. L. M. Sandratski, M. Uhl, and J. Kübler, J. Phys.: Condens. Matter 8, 983 (1996).
18. G. Kresse, J. Furthmüller, G. Kresse, and J. Hafner, Phys. Rev. B 47, 558 (1993); G. Kresse and J. Hafner, ibid. 49, 14 251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 55, 11 169 (1996).
19. G. Kresse, J. Furthmüller, G. Kresse, and J. Hafner, Phys. Rev. B 47, 558 (1993); G. Kresse and J. Hafner, ibid. 49, 14 251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 55, 11 169 (1996).
20. G. Kresse, J. Furthmüller, G. Kresse, and J. Hafner, Phys. Rev. B 47, 558 (1993); G. Kresse and J. Hafner, ibid. 49, 14 251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 55, 11 169 (1996).
21. G. Kresse, J. Furthmüller, G. Kresse, and J. Hafner, Phys. Rev. B 47, 558 (1993); G. Kresse and J. Hafner, ibid. 49, 14 251 (1994); G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 55, 11 169 (1996).
22. J. M. D. Coey and G. A. Sawatzky, J. Phys. C 4, 2386 (1971).
23. E. Kren, P. Szabo, and G. Konczos, Phys. Lett. 19, 103 (1965).
24. V. I. Anisimov, F. Aryasetiawan, and A. I. Lichtenstein, J. Phys.: Condens. Matter 9, 767 (1997).