High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films

Journal of Materials Research

Volumn 23, Issue 10, 2008, Pages 2774-2786

  Govindaraju, N ^a   Das, D ^a   Singh, Raj N ^a   Kosel, P B ^b  

^a UNIVERSITY OF CINCINNATI   (United States)

^b 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARGON; COMPOSITE MICROMECHANICS; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; DIAMOND CUTTING TOOLS; DIAMONDS; ELECTROMECHANICAL DEVICES; GAS DYNAMICS; GAS PERMEABLE MEMBRANES; GASES; INERT GASES; MEMS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; NITROGEN; WATER POLLUTION;

BARRIER HEIGHTS; COATING TECHNOLOGIES; ELECTRICAL BEHAVIORS; GAS PHASES; HIGH-TEMPERATURE; HIGHER CONCENTRATIONS; MATERIAL CHARACTERIZATIONS; MICROCRYSTALLINE DIAMOND FILMS; MICROELECTROMECHANICAL SYSTEMS; NANOCRYSTALLINE; NANOCRYSTALLINE DIAMOND FILMS; NEW APPLICATIONS; NITROGEN CONCENTRATIONS; ROOM TEMPERATURES; THICKNESS CURRENTS; VOLTAGE CHARACTERISTICS;

DIAMOND FILMS;

EID: 54449097531     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0330     Document Type: Article

References (17)

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