Below band gap photoreflectance transitions in epitaxial GaN

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1931-1933

  Yu, Phil W ^a   Clark, Jerry D ^a   Look, David C ^a   Chen, C Q ^b   Yang, Jinwei ^b   Koutstis, Edmundas ^b   Khan, M Asif ^b   Tsvertkov, Denis V ^c   Dmitriev, Vladimir A ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b The Department of Mechanical Engineering   (United States)

^c Technologies and Devices International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP SPECTRA (BLS); DONOR TRANSITIONS; IMPURITY TRANSITIONS; PHOTOREFLECTANCE (PR);

DOPING (ADDITIVES); EXCITONS; IMPURITIES; LIGHT SCATTERING; MERCURY VAPOR LAMPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; PHOTONS; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SILICON; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 5444248439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1780602     Document Type: Article

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