A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 9, 2001, Pages 1552-1557

  Luo, S ^a   Sowlati, T ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

BiCMOS analog integrated circuits; Code division multiple access; Power amplifiers; Radio frequency amplifiers

Indexed keywords

BYPASS CAPACITORS;

CMOS INTEGRATED CIRCUITS; CODE DIVISION MULTIPLE ACCESS; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; MODULATION; PRINTED CIRCUIT BOARDS; RADIO FREQUENCY AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0035444861     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.942566     Document Type: Article

References (6)

1. W. Simbuger, H.-D. Wohlmuth, P. Weger, and A. Heinz, "A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz," IEEE J. Solid-State Circuits, vol. 34, pp. 1881-1892, Dec. 1999.
2. W. Simbuger et al., "A monolithic 2.5 V 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, June 2000, pp. 853-856.
3. P.-D. Tseng, L. Zhang, G.-B. Gao, and M. F. Chang, "A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications," IEEE J. Solid-State Circuits, vol. 35, pp. 1338-1344, Sept. 2000.
4. X. Zhang, C. Saycocie, S. Munro, and G. Henderson, "A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, June 2000, pp. 857-860.
5. T. Sowlati and S. Luo, "Biasing boosting technique for a 1.9 GHz class AB RF amplifier," in Proc. Int. Low-Power Electron. Design Symp. Dig., July 2000, pp. 284-288.
6. S. Luo and T. Sowlati, "High-frequency amplifier circuit with independent control of quiescent current and bias impedance," U.S. patent pending.