Oxygen vacancy induced ferromagnetism in V2O5-x

Journal of the Physical Society of Japan

Volumn 77, Issue 2, 2008, Pages

  Xiao, Zhi Ren ^a   Guo, Guang Yu ^a   Lee, Po Han ^b   Hsu, Hua Shu ^c   Huang, Jung Chun Andrew ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Ab initio calculation; Dilute magnetic semiconductor; Magnetism; Oxygen vacancy; V2O5 x

Indexed keywords

EID: 54349124563     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.77.023706     Document Type: Article

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