Composition analysis of nickel silicide formed from evaporated and sputtered nickel for microsystem devices

Electronics Letters

Volumn 43, Issue 8, 2007, Pages 479-480

  Bhaskaran, M ^a   Sriram, S ^a   Du Plessis, J ^a   Holland, A S ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ETCHING; MICROMACHINING; THIN FILMS; VACUUM APPLICATIONS;

MICROSYSTEM DEVICES; NICKEL SILICIDE; SILICON SUBSTRATES;

NICKEL COMPOUNDS;

EID: 34247179662     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070203     Document Type: Article

References (4)

1. Qin, M., Poon, M.C., and Yuen, C.Y.: 'A study of nickel silicide film as a mechanical material', Sens. Actuators A, 2000, 87, p. 90
2. Clevenger, L.A., and Mann, R.W.: 'Schottky barrier heights of TM silicides on Si and GaAs' in Maex, K., and Van Rossum, M. (Eds): 'Properties of metal silicides' (INSPEC, London, 1995), p. 64
3. Plummer, J.D., Deal, M.D., and Griffin, P.B.: 'Silicon VLSI technology: fundamentals, practice and modeling' (Prentice-Hall, Inc, New Jersey, 2000), p. 700
4. Thomä, A.: J. Phys., Condens. Matter, 1990, 2, p. 3167