Temperature and illumination dependence of AlGaN/GaN HFET threshold voltage

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 1042-1046

  Okada, Masaya ^a   Takaki, Ryohei ^a   Kikuta, Daigo ^a   Ao, Jin Ping ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN GaN HFETs; Buffer layer; Illumination; Temperature coefficient; Threshold voltage

Indexed keywords

BUFFER CIRCUITS; CARRIER CONCENTRATION; GALLIUM NITRIDE; LIGHTING; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

ALGAN/GAN HFETS; BUFFER LAYERS; FERMI-DIRAC DISTRIBUTION FUNCTION; TEMPERATURE COEFFICIENT;

FIELD EFFECT TRANSISTORS;

EID: 33747891099     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.1042     Document Type: Conference Paper

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