Ion beam induced charge (IBIC) irradiation damage study in synthetic single crystal diamond using 2.6 MeV protons

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 9, 2008, Pages 2211-2215

  Lohstroh, A ^a   Sellin, P J ^a   Gkoumas, S ^a   Parkin, J ^a   Veeramani, P ^a   Prekas, G ^a   Veale, M C ^a   Morse, J ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELDS; CHARGE COLLECTION EFFICIENCIES; CONTACT AREAS; DETECTOR RESPONSES; IMAGING; INDUCED CHARGES; IRRADIATION DAMAGES; MEV PROTONS; POLARISATION PHENOMENON; SIGNAL AMPLITUDES; SPATIAL VARIATIONS; SYNTHETIC SINGLE CRYSTALS; TIME DEPENDENTS;

ATOMS; BEAM PLASMA INTERACTIONS; DETECTORS; DIAMONDS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC POWER PLANTS; ELECTROMAGNETIC WAVES; ION BEAM LITHOGRAPHY; ION BEAMS; ION BOMBARDMENT; ION MICROSCOPES; IRRADIATION; PARTICLE BEAMS; POWDERS; PROTON BEAMS; PROTONS; RADIATION DAMAGE; RADIATION EFFECTS; SINGLE CRYSTALS; SYNTHETIC DIAMONDS;

ELECTROMAGNETIC INDUCTION;

EID: 54249125027     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200879701     Document Type: Conference Paper

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