Threshold voltage modulation technique using fluorine treatment through atomic layer deposition TiN suitable for complementary metal-oxide-semiconductor devices

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2345-2348

  Tai, Kaori ^a   Yamaguchi, Shinpei ^a   Tanaka, Kazuki ^a   Hirano, Tomoyuki ^a   Oshiyama, Itaru ^a   Kazi, Salam ^a   Ando, Takashi ^a   Nakata, Masashi ^a   Yamanaka, Mayumi ^a   Yamamoto, Ryo ^a   Kanda, Sayuri ^a   Tateshita, Yasushi ^a   Wakabayashi, Hitoshi ^a   Tagawa, Yukio ^a   Tukamoto, Masanori ^a   Iwamoto, Hayato ^a   Saito, Masaki ^a   Nagashima, Naoki ^a   Kadomura, Shingo ^a  

^a SONY CORPORATION   (Japan)

Author keywords

ALD TiN; Fluorine treatment; Gate last process; High k metal gate; Oxygen treatment; Vth shift

Indexed keywords

ATOMIC PHYSICS; ATOMS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; FLUORINE; HAFNIUM COMPOUNDS; HOLE MOBILITY; MODULATION; MOSFET DEVICES; OXYGEN; PHYSICAL VAPOR DEPOSITION; PROBABILITY DENSITY FUNCTION; PULSED LASER DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THRESHOLD VOLTAGE; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSISTORS; WORK FUNCTION;

ALD-TIN; GATE-LAST PROCESS; HIGH-K/METAL GATE; OXYGEN TREATMENT; VTH SHIFT;

ATOMIC LAYER DEPOSITION;

EID: 54249116847     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2345     Document Type: Article

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