Analysis of trap distribution using time-of-flight spectroscopy

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 1079-1088

  Ohno, Akira ^a,b   Hanna, Jun Ichi ^a,b   Dunlap, David H ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Charge carrier transport; Multiple trapping model; Organic semiconductor; Photocurrent; Smectic liquid crystal; Time of flight spectroscopy

Indexed keywords

CHARGE CARRIERS; CHARGE TRAPPING; CIVIL AVIATION; LIGHT SOURCES; LIQUID CRYSTALS; NEGATIVE IONS; PHOTOCURRENTS; POWDERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

CHARGE-CARRIER TRANSPORT; MULTIPLE-TRAPPING MODEL; ORGANIC SEMICONDUCTOR; SMECTIC-LIQUID CRYSTAL; TIME-OF-FLIGHT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 54249094312     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1079     Document Type: Article

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21. 2), where r is the trap radius. The slow variation in s has a small effect on the quality of the fits in this study, and may be absorbed into an effective spatial density.