A 0.13μm MRAM with 0.26×0.44μm2 MTJ optimized on universal MR-RA relation for 1.2V high-speed operation beyond 143MHz

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 579-582

  Ueno, S ^a   Eimori, T ^c   Kuroiwa, T ^a   Furuta, H ^a   Tsuchimoto, J ^a   Maejima, S ^a   Iida, S ^a   Ohshita, H ^a   Hasegawa, S ^a   Hirano, S ^a   Yamaguchi, T ^a   Kurisu, H ^a   Yutani, A ^a   Hashikawa, N ^a   Maeda, H ^a   Ogawa, Y ^a   Kawabata, K ^a   Okumura, Y ^a   Tsuji, T ^a   Ohtani, J ^a   Tanizaki, T ^b   Yamaguchi, Y ^a   Ohishi, T ^a   Hidaka, H ^a   Takenaga, T ^c   Beysen, S ^c   Kobayashi, H ^c   Oomori, T ^c   Koga, T ^a   Ohji, Y ^a   more..

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Electronics Corporation   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EXTRAPOLATION; HIGH TEMPERATURE EFFECTS; MAGNETORESISTANCE; SPECIAL EFFECTS; TUNNEL JUNCTIONS;

HIGH-SPEED OPERATION; MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTIVE RANDOM ACESS MEMORY (MRAM); RESISTANCE-AREA PRODUCTS;

RANDOM ACCESS STORAGE;

EID: 21644443348     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. K. Tsunekawa et al., 9th Joint MMM/Intermag Conf. 2004, BD-03
3. M. Motoyoshi et al., 2002 Sympo. on VLSI tech., T21P4
4. D. Wang et al., 9th Joint MMM/Intermag Conf. 2004, BD-02
5. J.J.Sun et al., Appl. Phys. Lett., 76(17), 2424 (2000)
6. J.Fujikata et al., J. Appl. Phys., 89(11), 7558 (2001)
7. B.Oliver et al., J. Appl. Phys., 91(7), 4348 (2002)
8. T. Kuroiwa et al., 9th Joint MMM/Intermag Conf. 2004, FQ-04