Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4966-4970

  Murata, T ^a   Yamaguchi, T ^a   Sawada, M ^a   Shimizu, S ^a   Asai, K ^a   Kobayashi, K ^b   Miyatake, H ^a   Yoneda, M ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Hydrogen; Plasma processing and deposition; Silicon oxide

Indexed keywords

DANGLING BONDS; HYDROGEN; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON ALLOYS;

ATOMIC HYDROGEN; BONDING STATES; HYDROGEN CONCENTRATION; HYDROGEN IONS;

THIN FILMS;

EID: 33947103508     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.035     Document Type: Article

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