Effect of Sulfur Vacancies on Photoconductivity in Gallium Sulfide

Inorganic Materials

Volumn 34, Issue 10, 1998, Pages 971-975

  Alekperov, O Z ^a   Zarbaliev, M Z ^a  

^a INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2542586483     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. Alekperov, O.Z., Godjaev, M.O., Zarbaliev, M.Z., and Suleimanov, R.A., Interband Photoconductivity in Layer Semiconductors GaSe, InSe, and GaS, Solid State Commun., 1991, vol. 77, pp. 65-67.
2. Salaev, E.Yu., Godzhaev, M.O., Aliev, E.T., and Zarbaliev, M.Z., InSe and GaSe: Efficient Photoconductors over a Wide Spectral Region, Pis'ma Zh. Tekh. Fiz., 1988, vol. 14, no. 17, pp. 128-130.
3. Mushinskii, V.P. and Karaman, M.I., Opticheskie svoistva khal'kogenidov galliya i indiya (Optical Properties of Gallium and Indium Chalcogenides), Chisinau: Shtiintsa, 1973.
4. 1-x Mixed Crystals, Phys. Rev. B: Solid State, 1976, vol. 13, pp. 3534-3547.
5. Tagiev, E.G., Niftiev, G.M., Bashirov, S.M., and Azhdarova, D.S., Effect of Cobalt Impurity on the Electrical and Photoelectrical Properties of GaS, Solid State Commun., 1988, vol. 53, pp. 811-815.
6. Nadzhafov, A.I., Alekperov, O.Z., and Mamedov, L.V., Effect of Gamma Irradiation on the Photoconductivity Spectra of GaS and GaS:Yb Single Crystals, Neorg. Mater., 1991, vol. 27, no. 12, pp. 2432-2433.
7. Cotalano, I.M., Cingolani, A., and Minarfa, A., Luminescence of Layered Compounds Excited by High-Intensity Two-Photon Pumping, Phis. Rev. B: Solid State, 1977, vol. 15, pp. 954-958.
8. Akhundov, G.A., Musaev, S.A., Bakhyshov, A.E., et al., Anisotropic Optical Constants of GaS and GaSe near the Absorption Edge, Fiz. Tekh. Poluprovodn. (Leningrad), 1975, pp. 142-145.
9. Vavilov, V.S. and Britsyn, K.I., Concerning the Quantum Yield of Internal Photoelectric Effect in Germanium, Zh. Eksp. Teor. Fiz., 1958, vol. 34, pp. 521-523.
10. Vavilov, V.S. and Britsyn, K.I., Concerning the Quantum Yield of Photoionization in Silicon, Zh. Eksp. Teor. Fiz., 1958, vol. 34, pp. 1354-1355.
11. x Surface-Barrier Structure UV/VIS Photodetector, Fiz. Tekh. Poluprovodn. (Leningrad), 1976, vol. 10, pp. 1532-1534.
12. Tsarenkov, B.V., Gol'dberg, Yu.A., Gusev, G.V., and Ogurtsov, V.N., Photoelectric Properties of Au-n-GaP Surface-Barrier Structures in the Ultraviolet Region, Fiz. Tekh. Poluprovodn. (Leningrad), 1974, vol. 8, pp. 410-413.
13. x:H Films, Pis'ma Zh. Tekh. Fiz., 1992, vol. 20, pp. 89-93.
14. Kane, E.O., Electron Scattering by Pair Production in Silicon, Phys. Rev., 1970, vol. 159, pp. 624-631.
15. Antoncik, E., Impact Ionization and Quantum Efficiency in Semiconductors, Czech. J. Phys., 1967, vol. 17, pp. 953-968.
16. Antoncik, E., On the Theory of Quantum Efficiency in Germanium, Czech. J. Phys., 1967, vol. 18, pp. 157-170.
17. Abakumov, V.N., Kreshchuk, L.N., and Yasievich, I.N., Carrier Capture at Attracting Centers in Strong Electric Fields, Fiz. Tekh. Poluprovodn. (Leningrad), 1978, vol. 12, pp. 264-272.