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As noted above, the n -doping can increase the barrier for electrons, which now must transfer from the Fermi level of a semiconducting n -doped ETL to the LUMO level of an LEL. By the same token, however, the hole injection from LEL into the n -doped ETL becomes a very highly exothermic process as opposed to the highly endothermic process in the case of the undoped AAC HBETLs. In addition, no excited states are formed on the AAC molecules.
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As noted above, the n -doping can increase the barrier for electrons, which now must transfer from the Fermi level of a semiconducting n -doped ETL to the LUMO level of an LEL. By the same token, however, the hole injection from LEL into the n -doped ETL becomes a very highly exothermic process as opposed to the highly endothermic process in the case of the undoped AAC HBETLs. In addition, no excited states are formed on the AAC molecules.
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