-
1
-
-
53749101262
-
-
HMI Berlin: Berlin
-
Fink, D. ISL-Information; HMI Berlin: Berlin, 2005; pp 2-5.
-
(2005)
ISL-Information
, pp. 2-5
-
-
Fink, D.1
-
2
-
-
2342626573
-
-
Fink, D.; Petrov, A.; Hoppe, H.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.; Chandra, A.; Biswas, A.; Chadderton, L.T. Nucl. Instr. Meth. B 2004, 218, 355-361.
-
(2004)
Nucl. Instr. Meth. B
, vol.218
, pp. 355-361
-
-
Fink, D.1
Petrov, A.2
Hoppe, H.3
Fahrner, W.R.4
Papaleo, R.M.5
Berdinsky, A.6
Chandra, A.7
Biswas, A.8
Chadderton, L.T.9
-
3
-
-
28244495139
-
-
Sinha, D.; Petrov, A.; Fink, D.; Fahrner, W.R.; Hoppe, K.; Chandra, A. Rad. Eff. Def. Sol. 2004, 159, 515-534.
-
(2004)
Rad. Eff. Def. Sol
, vol.159
, pp. 515-534
-
-
Sinha, D.1
Petrov, A.2
Fink, D.3
Fahrner, W.R.4
Hoppe, K.5
Chandra, A.6
-
4
-
-
2442581343
-
Characterization of "TEMPOS": A New Tunable Electronic Material with Pores in Oxide on Silicon. In Radiation Effects and Ion-Beam Processing of Materials: Wang, L.-M
-
Fromknecht, R, Snead, L, Downey, D.F, Takahasi, H, Eds, Materials Research Society: Boston, MA
-
Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Chubaci, J.F.; Tabacniks, M.H. Characterization of "TEMPOS": A New Tunable Electronic Material with Pores in Oxide on Silicon. In Radiation Effects and Ion-Beam Processing of Materials: Wang, L.-M., Fromknecht, R., Snead, L., Downey, D.F., Takahasi, H., Eds.; MRS Proceedings Vol. 792; Materials Research Society: Boston, MA, 2003; R7.9.
-
(2003)
MRS Proceedings
, vol.792
-
-
Fink, D.1
Petrov, A.V.2
Hoppe, K.3
Fahrner, W.R.4
Chubaci, J.F.5
Tabacniks, M.H.6
-
5
-
-
32844460031
-
-
Fink, D.; Petrov, A.; Fahrner, W.R.; Hoppe, K.; Papaleo, R.M.; Berdinsky, A.; Chandra, A.; Zrineh, A.; Chadderton, L.T. Int. J. Nanosci. 2005, 4, 965-973.
-
(2005)
Int. J. Nanosci
, vol.4
, pp. 965-973
-
-
Fink, D.1
Petrov, A.2
Fahrner, W.R.3
Hoppe, K.4
Papaleo, R.M.5
Berdinsky, A.6
Chandra, A.7
Zrineh, A.8
Chadderton, L.T.9
-
6
-
-
34248998460
-
-
Fink, D.; Chandra, A.; Alegaonkar, P.; Berdinsky, A.; Petrov, A.; Sinha, D. Rad. Eff. Def. Sol. 2007, 162, 151-156.
-
(2007)
Rad. Eff. Def. Sol
, vol.162
, pp. 151-156
-
-
Fink, D.1
Chandra, A.2
Alegaonkar, P.3
Berdinsky, A.4
Petrov, A.5
Sinha, D.6
-
8
-
-
0001540595
-
-
Erdös, P.; Rènyi, A. Publ. Math, Debrecen 1959, 6, 290.
-
(1959)
Publ. Math, Debrecen
, vol.6
, pp. 290
-
-
Erdös, P.1
Rènyi, A.2
-
11
-
-
54049154645
-
Ion Track-based Electronic Elements
-
Zvenigorod, Aug 24-28
-
Fink, D.; Chandra, A.; Fahrner, W.R.; Hoppe, K.; Winkelmann, H.; Saad, A.; Alegaonkar, P.; Berdinsky, A.; Grasser, D.; Lorenz, R. In Ion Track-based Electronic Elements. Proceedings of XVIII International Conference on Ion-Surface Interactions, Zvenigorod, Aug 24-28, 2007.
-
(2007)
Proceedings of XVIII International Conference on Ion-Surface Interactions
-
-
Fink, D.1
Chandra, A.2
Fahrner, W.R.3
Hoppe, K.4
Winkelmann, H.5
Saad, A.6
Alegaonkar, P.7
Berdinsky, A.8
Grasser, D.9
Lorenz, R.10
-
12
-
-
54049156052
-
System and Method for Fabricating Logic Devices Comprising Carbon Nanotubes Transistor
-
US Patent US/0023986 A, September 27, 2001
-
Mancevski, V. System and Method for Fabricating Logic Devices Comprising Carbon Nanotubes Transistor. US Patent US2001/0023986 A, September 27, 2001.
-
(2001)
-
-
Mancevski, V.1
-
13
-
-
54049083379
-
-
Berdinsky, A.S.; Alegaonkar, P.S.; Lee, H.C.; Jung, J.S.; Han, J.H.; Yoo, J.B.; Fink, D.; Chadderton, L.T. Nano: Brief Rep. Rev. 2006, 1, 1-9;
-
(2006)
Nano: Brief Rep. Rev
, vol.1
, pp. 1-9
-
-
Berdinsky, A.S.1
Alegaonkar, P.S.2
Lee, H.C.3
Jung, J.S.4
Han, J.H.5
Yoo, J.B.6
Fink, D.7
Chadderton, L.T.8
-
14
-
-
34249331619
-
-
Berdinsky, A.S.; Alegaonkar, P.S.; Lee, H.C.; Jung, J.S.; Han, J.H.; Yoo, J.B.; Fink, D.; Chadderton, L.T. Nano 2007, 2, 59-68.
-
(2007)
Nano
, vol.2
, pp. 59-68
-
-
Berdinsky, A.S.1
Alegaonkar, P.S.2
Lee, H.C.3
Jung, J.S.4
Han, J.H.5
Yoo, J.B.6
Fink, D.7
Chadderton, L.T.8
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