Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 355-361

  Fink, D ^a   Petrov, A V ^a   Hoppe, K ^b   Fahrner, W R ^c   Papaleo, R M ^d   Berdinsky, A S ^e   Chandra, A ^f   Chemseddine, A ^a   Zrineh, A ^g   Biswas, A ^h   Faupel, F ^h   Chadderton, L T ⁱ  

^a HAHN MEITNER INSTITUT   (Germany)

^b Tech Highschool of S Westfalia   (Germany)

^c UNIVERSITY OF HAGEN   (Germany)

^d PONTIFICAL CATHOLIC UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^e NOVOSIBIRSK STATE TECHNICAL UNIVERSITY   (Russian Federation)

^f PANJAB UNIVERSITY   (India)

^g MOHAMMED V UNIVERSITY   (Morocco)

^h UNIVERSITY OF KIEL   (Germany)

ⁱ AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Electronics; Etched ion tracks; Silicon; Silicon oxide; Silicon oxynitride

Indexed keywords

CHARGE CARRIERS; COSTS; ELECTRONIC EQUIPMENT; ELECTRONIC STRUCTURE; ETCHING; HEAVY IONS; MOSFET DEVICES; PHOTOELECTRIC CELLS; PHOTOLUMINESCENCE; POLYETHYLENE TEREPHTHALATES; RESISTORS; SCANNING ELECTRON MICROSCOPY; SENSORS;

ETCHED ION TRACKS; SILICON OXIDE; SILICON OXYNITRIDES; THERMOSENSORS;

SILICON COMPOUNDS;

EID: 2342626573     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.083     Document Type: Conference Paper

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