Low-power 100Gbit/s selector IC using InP/InGaAs DHBTs

Electronics Letters

Volumn 44, Issue 21, 2008, Pages 1252-1253

  Arayashiki, Y ^a   Ohkubo, Y ^a   Amano, Y ^a   Takagi, A ^a   Ejima, M ^a   Matsuoka, Y ^a  

^a ANRITSU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-FREQUENCY CHARACTERISTICS; HIGH-SPEED OPERATIONS; INP/INGAAS; LOW BIAS; LOW POWERS; LOW SUPPLY VOLTAGES; NOVEL DESIGN; POWER CONSUMPTION;

EID: 53849103283     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20081628     Document Type: Article

References (4)

1. Murata, K., Sano, K., Kitabayashi, H., Sugitani, S., Sugahara, H., and Enoki, T.: ' 100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT Technology ', IEEE J. Solid-State Circuits, 2004, 39, (1), p. 207-213 10.1109/JSSC.2003.820854 0018-9200
2. Suzuki, Y., Yamazaki, Z., Amamiya, Y., Wada, S., Uchida, H., Kurioka, C., Tanaka, S., and Hida, H.: ' 120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs ', IEEE J. Solid-State Circuits, 2004, 39, (12), p. 2397-2402 10.1109/JSSC.2004.835647 0018-9200
3. Driad, R., Makon, R.E., Hurm, V., Shneider, K., Benkhelifa, F., Losch, R., and Rosenzweig, J.: ' INP DHBT-based ICs for 100Gbit/s data transmission ', Int. Conf. on Indium Phosphide and Related Materials, Vesailles, France, 2008
4. Ohkubo, Y., Matsumoto, T., Koji, T., Amano, Y., Takagi, A., and Matsuoka, Y.: ' High-performance self-aligned InP/InGaAs DHBTs with a passivation ledge utilizing a thin etching stop layer ', Int. Conf. on Indium Phosphide and Related Materials, Versailles, France, 2008