Fabrication of MgO barrier for a magnetic tunnel junction in as-deposited state using amorphous RE-TM alloy

Journal of Magnetism and Magnetic Materials

Volumn 320, Issue 22, 2008, Pages 2963-2966

  Ohmori, H ^a   Hatori, T ^a   Nakagawa, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial growth; Magnetic tunnel junction; MgO (1 0 0); RE TM alloy

Indexed keywords

ANNEALING; BUFFER LAYERS; ELECTRIC CURRENTS; EPITAXIAL LAYERS; FILM GROWTH; FILM PREPARATION; GALVANOMAGNETIC EFFECTS; HALL EFFECT; IRON ALLOYS; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; OPTICAL WAVEGUIDES; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

EPITAXIAL GROWTH; MAGNETIC TUNNEL JUNCTION; MGO (1 0 0); RE-TM ALLOY;

AMORPHOUS FILMS;

EID: 53749105573     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2008.08.005     Document Type: Article

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