Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

Journal of Crystal Growth

Volumn 310, Issue 21, 2008, Pages 4535-4538

  Kubo, K ^a   Kato, Y ^a   Kanai, K ^a   Ohta, J ^b,c   Fujioka, H ^b,c   Oshima, M ^a,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Single crystal growth; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; GALLIUM; LATTICE CONSTANTS; MAGNETIC PROPERTIES; MANGANESE ALLOYS; MANGANESE COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; X RAY ANALYSIS; X RAY DIFFRACTION;

A1. SINGLE CRYSTAL GROWTH; A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ALLOYS;

EID: 53449099659     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.051     Document Type: Article

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