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Volumn 49, Issue 5, 2007, Pages 1114-1118

A high-frequency and high-power quasi-class-E amplifier design using a finite bias feed inductor

Author keywords

Class E amplifier; High efficiency amplifier; Parasitic component; Power amplifier; Power added efficiency; Switching mode amplifier

Indexed keywords

INDUCTANCE; MOSFET DEVICES; POWER INDUCTORS; TIME DOMAIN ANALYSIS; TRANSISTORS; WAVEFORM ANALYSIS;

EID: 34248546458     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.22368     Document Type: Article
Times cited : (6)

References (8)
  • 1
    • 0016521160 scopus 로고    scopus 로고
    • N.O. Sokal and A.D. Sokal, Class E, a new class of high-efficiency tuned single-ended switching power amplifiers, IEEE J Solid-State Circuits SC-10 (1975), 168-176.
    • N.O. Sokal and A.D. Sokal, Class E, a new class of high-efficiency tuned single-ended switching power amplifiers, IEEE J Solid-State Circuits SC-10 (1975), 168-176.
  • 2
    • 0017629837 scopus 로고
    • Idealized operation of the class E tuned power amplifier
    • F.H. Raab, Idealized operation of the class E tuned power amplifier, IEEE Trans Circuit Syst CAS-24 (1977), 725-735.
    • (1977) IEEE Trans Circuit Syst , vol.CAS-24 , pp. 725-735
    • Raab, F.H.1
  • 4
    • 0029378999 scopus 로고
    • The transmission-line high-efficiency class-E amplifier
    • T.B. Mader and Z.B. Popovic, The transmission-line high-efficiency class-E amplifier, IEEE Microwave Guided Wave Lett 5 (1995), 290-292.
    • (1995) IEEE Microwave Guided Wave Lett , vol.5 , pp. 290-292
    • Mader, T.B.1    Popovic, Z.B.2
  • 5
    • 33749865876 scopus 로고    scopus 로고
    • An 1 GHz class E LDMOS power amplifier
    • A. Adahl and H. Zirath, An 1 GHz class E LDMOS power amplifier, 33rd Eur Microwave Conf Dig 1 (2003), 285-288.
    • (2003) 33rd Eur Microwave Conf Dig , vol.1 , pp. 285-288
    • Adahl, A.1    Zirath, H.2
  • 6
    • 33645968991 scopus 로고    scopus 로고
    • Highly efficient LDMOS power amplifier based on class-E topology
    • J. Lee, S. Kim, J. Kam, J. Kim, L. Kim, and B. Kim, Highly efficient LDMOS power amplifier based on class-E topology, Microwave Opt Technol Lett 48 (2006), 789-791.
    • (2006) Microwave Opt Technol Lett , vol.48 , pp. 789-791
    • Lee, J.1    Kim, S.2    Kam, J.3    Kim, J.4    Kim, L.5    Kim, B.6
  • 7
  • 8
    • 0035444756 scopus 로고    scopus 로고
    • A new empirical large signal model of Si LDMOSFETs for high-power class-AB amplifier design
    • Y. Yang, Y.Y. Woo, J. Yi, and B. Kim, A new empirical large signal model of Si LDMOSFETs for high-power class-AB amplifier design, IEEE Trans Microwave Theory Tech 49 (2001), 1626-1633.
    • (2001) IEEE Trans Microwave Theory Tech , vol.49 , pp. 1626-1633
    • Yang, Y.1    Woo, Y.Y.2    Yi, J.3    Kim, B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.