Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO

Materials Chemistry and Physics

Volumn 112, Issue 2, 2008, Pages 557-561

  Zhang, Rengang ^a   Wang, Baoyi ^b   Wei, Long ^b  

^a WUHAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Sputtering; Sulfidation; ZnS thin films

Indexed keywords

ABSORPTION; CHEMICAL REACTIONS; GRAIN (AGRICULTURAL PRODUCT); GRAIN GROWTH; GRAIN SIZE AND SHAPE; MICROSCOPIC EXAMINATION; SEMICONDUCTING ZINC COMPOUNDS; SOLIDS; SULFUR; SURFACE TREATMENT; THICK FILMS; THIN FILMS; VAPORS; X RAY ANALYSIS; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

ABSORPTION EDGES; AS-DEPOSITED FILMS; AUGER ELECTRONS; C -AXIS; C-AXIS ORIENTATIONS; GRAIN SIZES; GRAIN SURFACES; OPTICAL TRANSMITTANCES; PREFERRED ORIENTATION; RE CRYSTALLIZATION; RF POWERING; SPUTTERING; SULFIDATION; TRANSMISSION SPECTRUMS; UV-VISIBLE; ZNO THIN FILMS; ZNS FILMS; ZNS THIN FILMS;

AUGER ELECTRON SPECTROSCOPY;

EID: 53349101341     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.05.089     Document Type: Article

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