Inclusion of bandstructure and many-body effects in a quantum well laser simulator

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 463-468

  Oyafuso, F ^a,b   Von Allmen, P ^a   Grupen, M ^a   Hess, K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bandstructure; Gain; k p; Laser; Modulation response; Quantum well

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; CORRELATION METHODS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONIC DENSITY OF STATES; ITERATIVE METHODS; MATRIX ALGEBRA; POISSON DISTRIBUTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

COULOMB ENHANCEMENT FACTOR; HAMILTONIANS; LOCAL DENSITY APPROXIMATION (LCA); OPTICAL MATRIX ELEMENT FACTOR;

QUANTUM WELL LASERS;

EID: 0032319839     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/30974     Document Type: Article

References (9)

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