Fabrication and characterization of Nd2Ti2O 7 for ferroelectric field effect transistor

Ferroelectrics

Volumn 259, Issue 1, 2001, Pages 299-304

  Kim, Woo Sik ^a   Kang, Min Gu ^a   Yang, Jun Kyu ^a   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

Author keywords

ferroelectrics; field effect transistor; memory windows; Nd2Ti 2O7

Indexed keywords

ANNEALING TEMPERATURES; APPLIED VOLTAGES; C-V CHARACTERISTIC; CRYSTALLINE PHASE; CRYSTALLINE PROPERTIES; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC FIELDS; FERROELECTRIC MEMORY EFFECTS; FERROELECTRICS; HP4284A LCR METER; LOW DIELECTRIC CONSTANTS; MEMORY ELEMENT; MEMORY WINDOW; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; ND2TI 2O7; NON-VOLATILE; SI(1 0 0); SWEEP RATES;

CRYSTALLINE MATERIALS; ELECTRIC FIELDS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FIELD EFFECT TRANSISTORS; NEODYMIUM; SOL-GEL PROCESS; X RAY DIFFRACTION;

FERROELECTRICITY;

EID: 52949121516     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190108008751     Document Type: Conference Paper

References (4)

1. H. Gundel, H. Riege, J. Handerek, and K, Zioutas, Appl. Phys. Lett., 54, 2071 (1989).
2. M. Shoyma, A.Tsuzuki, K. Kato, and N. Murayama, J. Appl. Phys., 75, 561 (1999)
3. Jin-Ping Han and T. P. Ma, J. Appl. Phys., 72, 1185 (1998)
4. M. Kimura, S. Nanamatsu, T. Kawamura, and S. Matsushita, Jpn.J. Appl. Phys., 13, 1473 (1974)