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Volumn , Issue , 2008, Pages 2909-2913

Quantitative study on operation frequency limitation of multi-level high voltage power converter equipped with Si-IEGT and SiC-PiN diode

Author keywords

[No Author keywords available]

Indexed keywords

DC GENERATORS; ESTIMATION; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE;

EID: 52349119998     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2008.4592391     Document Type: Conference Paper
Times cited : (7)

References (9)
  • 2
    • 33749507242 scopus 로고    scopus 로고
    • A Study on Switching Frequency Limitation of High Voltage Power Converters in Combination of Si-IEGT and SiC-PiN Diode
    • K. Sung, K. Suzuki, Y. Tanaka, T. Ogura, and H. Ohashi, "A Study on Switching Frequency Limitation of High Voltage Power Converters in Combination of Si-IEGT and SiC-PiN Diode," in Proc. IEEE Applied Power Electronics Conf. (APEC), pp. 455-459, 2006.
    • (2006) Proc. IEEE Applied Power Electronics Conf. (APEC) , pp. 455-459
    • Sung, K.1    Suzuki, K.2    Tanaka, Y.3    Ogura, T.4    Ohashi, H.5
  • 8
    • 1942487835 scopus 로고    scopus 로고
    • Turn-off Switching Analysis Considering Dynamic Avalanche Effect for Low Turn-Off Loss High-Voltage IGBTs
    • T. Ogura, H. Ninomiya, K. Sugiyama, and T. Inoue, "Turn-off Switching Analysis Considering Dynamic Avalanche Effect for Low Turn-Off Loss High-Voltage IGBTs," IEEE Trans. Electron Devices, Vol. 51, No. 4, pp. 629-635, 2004.
    • (2004) IEEE Trans. Electron Devices , vol.51 , Issue.4 , pp. 629-635
    • Ogura, T.1    Ninomiya, H.2    Sugiyama, K.3    Inoue, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.