The modeling and characterization of silicon carbide thyristors

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2008, Pages 1092-1097

  Saadeh, O S ^a   Mantooth, H A ^a   Balda, J C ^a   Agarwal, A K ^b   Kashyap, A S ^a  

^a University of Arkansas   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHGEAR; INDUSTRIAL MANAGEMENT; MODERNIZATION; NONMETALS; PARAMETER EXTRACTION; POWER ELECTRONICS; SILICON; THYRISTORS;

DEVICE GEOMETRIES; ELECTRIC GRIDS; LUMPED-CHARGE; MODELING METHODS; NON-QUASI-STATIC EFFECTS; PHYSICS-BASED MODELLING; PRECISE MEASUREMENTS; TRANSIENT PERFORMANCE;

SILICON CARBIDE;

EID: 52349102110     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2008.4592075     Document Type: Conference Paper

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