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Volumn 45, Issue 1, 1999, Pages 15-27

Process and equipment simulation of copper chemical vapor deposition using Cu(hfac)vtms

Author keywords

Copper metallization; CVD; Simulation

Indexed keywords

ARGON; COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; COPPER; COPPER COMPOUNDS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION;

EID: 0033075656     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00257-3     Document Type: Article
Times cited : (10)

References (21)
  • 1
    • 85034543599 scopus 로고    scopus 로고
    • The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1994
    • The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1994.
  • 4
    • 85034530918 scopus 로고
    • private communication
    • J.A.T. Norman, private communication, 1994.
    • (1994)
    • Norman, J.A.T.1
  • 12
    • 0002001069 scopus 로고
    • Chemical vapor deposition processes
    • M. Meyyappan (Ed.), Artech House, Boston, chapt. 4
    • C. Klein, Chemical vapor deposition processes, in: M. Meyyappan (Ed.), Computational Modeling in Semiconductor Processing, Artech House, Boston, 1995, chapt. 4.
    • (1995) Computational Modeling in Semiconductor Processing
    • Klein, C.1
  • 15
    • 3342911392 scopus 로고
    • R. Blumenthal, G. Janssen (Eds.), The Materials Research Society, Pittsburgh, PA
    • J. Röber, T. Geßner, in: R. Blumenthal, G. Janssen (Eds.), Advanced Metallization for ULSI Applications, The Materials Research Society, Pittsburgh, PA, 1994, p. 133.
    • (1994) Advanced Metallization for ULSI Applications , pp. 133
    • Röber, J.1    Geßner, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.