Weak antilocalization and beating pattern in high electron mobility Al xGa1-xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Zhou, W Z ^a,b,c   Lin, T ^c   Shang, L Y ^c   Sun, L ^c   Gao, K H ^c   Zhou, Y M ^c   Yu, G ^c   Tang, N ^d   Han, K ^d   Shen, B ^d   Guo, S L ^c   Gui, Y S ^c   Chu, J H ^a,c  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b GUANGXI UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^d PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRON GAS; ELECTRON MOBILITY; SEMICONDUCTOR QUANTUM DOTS; TWO DIMENSIONAL;

HIGH-ELECTRON-MOBILITY; HIGH-MOBILITY; WEAK ANTILOCALIZATION;

TWO DIMENSIONAL ELECTRON GAS;

EID: 51849111457     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2974091     Document Type: Article

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