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Volumn , Issue , 2008, Pages 559-562
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Process dependence of 0.11 μm RF CMOS on high-resistivity substrate for system on chip (SOC) application
a
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Author keywords
High Q inductor; High Gain antenna; High resistivity substrate; Mm wave application; Oxygen predicted wafer; RF noise; Snap back voltage
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Indexed keywords
ANTENNA ACCESSORIES;
DIGITAL INTEGRATED CIRCUITS;
ELECTRIC CURRENTS;
ELECTRONICS INDUSTRY;
EPITAXIAL GROWTH;
INTEGRATED CIRCUITS;
ION BOMBARDMENT;
ION IMPLANTATION;
LEAKAGE CURRENTS;
MIM DEVICES;
OPTICAL DESIGN;
RADIO WAVES;
SILICON;
SILICON WAFERS;
SUBSTRATES;
APPLICATIONS.;
HIGH Q INDUCTOR;
HIGH RESISTIVITY;
HIGH- GAIN ANTENNA;
HIGH-RESISTIVITY SUBSTRATE;
LATCH UPS;
M-I-M CAPACITORS;
MIXED SIGNALS;
MM-WAVE APPLICATION;
OXYGEN PREDICTED WAFER;
PROCESS DEPENDENCE;
RADIO FREQUENCY INTEGRATED CIRCUITS;
RF NOISE;
RF-CMOS;
SI SUBSTRATE;
SINTER PROCESSING;
SNAP-BACK;
SNAP-BACK VOLTAGE;
SQUARE ROOTING;
SUBSTRATE NOISE;
SYSTEM-ON-CHIP APPLICATIONS;
WAFER FABRICATIONS;
DIGITAL CIRCUITS;
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EID: 51849096908
PISSN: 15292517
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/RFIC.2008.4561499 Document Type: Conference Paper |
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Times cited : (1)
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References (6)
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