High performance digital-analog mixed device on a Si substrate with resistivity beyond 1 kΩ cm

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 757-760

  Ohguro, T ^a   Ishikawa, T ^a   Kimura, T ^a   Samata, S ^a   Kawasaki, A ^a   Nagano, T ^a   Yoshitomi, T ^a   Toyoshima, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUITS; ELECTRIC CONDUCTIVITY; POWER AMPLIFIERS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

DIGITAL ANALOG MIXED DEVICES;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034452660     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS
2. Extended study of crosstalk in SOI-SIMOX substrate
3. Novel substrate contact structure for high-Q siicon integrated spiral inductors
4. Transistor design issues in integrating analog functions with high performance digital CMOS