Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum wells

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Fujiwara, K ^a   Jahn, U ^b   Grahn, H T ^b  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CATHODOLUMINESCENCE; CIVIL AVIATION; COMPUTER NETWORKS; ELECTRON BEAMS; GALLIUM; GALLIUM ALLOYS; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SEPARATION; WELLS;

CATHODOLUMINESCENCE SPECTROSCOPY; INTENSITY DISTRIBUTIONS; QUANTUM WELLS;

DIFFUSION BARRIERS;

EID: 51749107214     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980021     Document Type: Article

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