Excitonic properties of weakly coupled GaAs single quantum wells investigated with high-resolution photoluminescence excitation spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 20, 1997, Pages 13321-13325

  Schrottke, L ^a   Grahn, H ^a   Fujiwara, K ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003084986     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.13321     Document Type: Article

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